The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jul. 17, 2007
Andreas Gehring, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Roman Boschke, Dresden, DE;
Casey Scott, Dresden, DE;
Andreas Gehring, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Roman Boschke, Dresden, DE;
Casey Scott, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
By providing a protection layer on a silicon/germanium material of high germanium concentration, a corresponding loss of strained semiconductor material may be significantly reduced or even completely avoided. The protection layer may be formed prior to critical cleaning processes and may be maintained until the formation of metal silicide regions. Hence, high performance gain of P-type transistors may be accomplished without requiring massive overfill during the selective epitaxial growth process.