Company Filing History:

4 out of 37,905

Micron Technology Incorporated

patents

3 out of 12

Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.

Globalfoundries U.S. Inc.

patents

5. 2 out of 832,680

Other

patents

Years Active: 2014-2025

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13 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12446253 - Field effect transistor with adjustable effective gate length (2025-10-14),

2. 11610999 - Floating-gate devices in high voltage applications (2023-03-21),

3. 11495660 - Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors with defect prevention structures (2022-11-08),

4. 11289598 - Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors (2022-03-29),

5. 11257672 - Semiconductor devices including active regions in RAM areas with deposition determined pitch (2022-02-22),

6. 10784263 - Semiconductor device having a memory cell and method of forming the same (2020-09-22),

7. 10727236 - Circuits constructed from stacked field-effect transistors (2020-07-28),

8. 10388657 - Semiconductor device having a memory cell and method of forming the same (2019-08-20),

9. 10276453 - Circuits constructed from stacked field-effect transistors (2019-04-30),

10. 9704871 - Semiconductor device having a memory cell and method of forming the same (2017-07-11),

11. 9196619 - Semiconductor device having metal bit line (2015-11-24),

12. 8742494 - Semiconductor device and method of forming the same (2014-06-03),

13. 8624333 - Semiconductor device, method of forming semiconductor device, and data processing system (2014-01-07),

Title: Biography of Inventor Nan Wu

Introduction

Nan Wu is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on innovative semiconductor structures and devices.

Latest Patents

Among his latest patents is a groundbreaking invention related to floating-gate devices in high voltage applications. This patent discusses semiconductor structures that include a gate structure comprising a gate dielectric material and a gate electrode, along with a vertically stacked capacitor in electrical connection to the gate electrode. Another notable patent involves co-integrated high voltage and medium voltage field effect transistors with defect prevention structures. This invention details a semiconductor on insulator (SOI) region and a bulk region integrated in a single substrate, featuring active devices in both regions and a defect prevention structure bordering the SOI region.

Career Highlights

Nan Wu has worked with leading companies in the semiconductor industry, including Micron Technology and Globalfoundries Dresden Module One Limited Liability Company & Co. Kg. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Nan has collaborated with notable professionals in the field, including Peter Baars and Alban Zaka. These collaborations have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Nan Wu's contributions to

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