The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Dec. 21, 2018
Globalfoundries Inc., Grand Cayman, KY;
Nan Wu, Sachsen, DE;
Peter Baars, Dresden, DE;
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures that include stacked field-effect transistors and methods for forming a structure that includes stacked field-effect transistors. A structure includes a first fin, a second fin arranged over the first fin, a first dielectric layer between the first fin and the second fin, and a first inverter. The first inverter includes a first field-effect transistor with a channel region in the first fin and a second field-effect transistor with a channel region in the second fin. The first field-effect transistor and the second field-effect transistor share a first gate structure having an overlapping arrangement with the channel region in the first fin and the channel region in the second fin. The first fin has a longitudinal axis, and the second fin has a longitudinal axis that is aligned at an angle relative to the longitudinal axis of the first fin.