The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Jun. 24, 2014
Applicant:

Nan Wu, Tokyo, JP;

Inventor:

Nan Wu, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10894 (2013.01);
Abstract

Disclosed herein is a device that includes: a semiconductor substrate including a memory cell region and a peripheral circuit region arranged around the memory cell region; an element isolation region formed in the memory cell region and the peripheral circuit region; a cell active region defined by the element isolation region formed in the memory cell region; a first interlayer insulation film disposed on the cell active region, the first interlayer insulation film having a bit contact hole passing therethrough to expose a portion of an upper surface of the cell active region; and a bit line having a first metal laminated film, the bit line being disposed on the first interlayer insulation film so as to fill the bit contact hole.


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