The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Mar. 15, 2018
Globalfoundries Inc., Grand Cayman, KY;
Nan Wu, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Structures that include vertically-arranged field-effect transistors and methods for forming a structure that includes vertically-arranged field-effect transistors. A first field-effect transistor includes a section of a first fin, a first source/drain region, and a second source/drain region. The section of the first fin is arranged between the first source/drain region and the second source/drain region of the first field-effect transistor. A second field-effect transistor includes a second fin arranged over the section of the first fin, a first source/drain region, and a second source/drain region. A functional gate structure has an overlapping arrangement with the section of the first fin and also has an overlapping arrangement with a section of the second fin that is arranged between the first source/drain region and the second source/drain region of the second field-effect transistor.