The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Nov. 06, 2020
Applicant:
Globalfoundries Dresden Module One Limited Liability Company & Co. KG, Dresden, DE;
Inventor:
Nan Wu, Dresden, DE;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to co-integrated high voltage and medium voltage devices with defect prevention structures and methods of manufacture. The structure includes: a semiconductor on insulator (SOI) region and a bulk region integrated in a single substrate; at least one active device in the bulk region; at least one active device in the SOI region; and a defect prevention structure bordering the SOI region.
Wu, Nan. (2022). Co-integrated high voltage (hv) and medium voltage (mv) field effect transistors with defect prevention structures (U.S. Patent No. 11495660). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11495660
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile