The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

May. 26, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Peter Baars, Dresden, DE;

Alexander M. Derrickson, Saratoga Springs, NY (US);

Ketankumar Harishbhai Tailor, Dresden, DE;

Zhixing Zhao, Dresden, DE;

Judson R. Holt, Ballston Lake, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 29/66234 (2013.01); H01L 29/735 (2013.01);
Abstract

Embodiments of the disclosure provide a bipolar transistor structure having a base with a varying horizontal width and methods to form the same. The bipolar transistor structure includes a first emitter/collector (E/C) layer on an insulator layer. A base layer is over the insulator layer. A spacer between the first E/C layer and the base layer. The base layer includes a lower base region, and the spacer is adjacent to the lower base region and the first E/C layer. An upper base region is on the lower base region and the spacer. A horizontal width of the upper base region is larger than a horizontal width of the lower base region.


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