The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Mar. 19, 2021
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Ketankumar Harishbhai Tailor, Dresden, DE;

Peter Baars, Dresden, DE;

Assignee:

GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 21/82385 (2013.01); H01L 27/0922 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01); H01L 29/66492 (2013.01); H01L 29/66689 (2013.01); H01L 29/7835 (2013.01);
Abstract

An integrated circuit (IC) structure and a field plate are disclosed. The IC structure and field plate may find advantageous application with, for example, extended drain metal-oxide semiconductor (EDMOS) transistors. The IC structure includes a transistor including a metal gate structure and a drain extension region extending laterally from partially under the metal gate structure to a drain region. A metal field plate is over the drain extension region. Due to being formed simultaneously as part of a gate-last formation approach, the metal field plate has an upper surface coplanar with an upper surface of the metal gate structure. A field plate contact may be on the metal field plate.


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