The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
May. 14, 2007
Luis-felipe Giles, Munich, DE;
Matthias Goldbach, Dresden, DE;
Martin Bartels, Dresden, DE;
Paul Kuepper, Glonn, DE;
Luis-Felipe Giles, Munich, DE;
Matthias Goldbach, Dresden, DE;
Martin Bartels, Dresden, DE;
Paul Kuepper, Glonn, DE;
Infineon Technologies AG, Neubibery, DE;
Qimonda AG, Munich, DE;
Abstract
A method of producing a semiconductor element in a substrate includes forming a plurality of micro-cavities in a substrate, creating an amorphization of the substrate to form crystallographic defects and a doping of the substrate with doping atoms, depositing an amorphous layer on top of the substrate, and annealing the substrate, such that at least a part of the crystallographic defects is eliminated using the micro-cavities. The semiconductor element is formed using the doping atoms.