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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10163933 B1

PDFFull Text
Expired
Date of Patent:
Dec. 25, 2018

Filed:

Aug. 14, 2017

Ferro-fet device with buried buffer/ferroelectric layer stack

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ralf Richter, Radebeul, DE;

Stefan Dünkel, Dresden, DE;

Martin Trentzsch, Dresden, DE;

Sven Beyer, Dresden, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Ditthavong & Steiner, P.C.

Primary Examiner:

Tram H Nguyen

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/76 (2006.01); H01L 31/036 (2006.01); H01L 31/112 (2006.01); H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); H01L 21/28088 (2013.01); H01L 21/28291 (2013.01); H01L 27/11597 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 29/4966 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract

Methods of forming a buffer layer to imprint ferroelectric phase in a ferroelectric layer and the resulting devices are provided. Embodiments include forming a substrate; forming a buffer layer over the substrate; forming a ferroelectric layer over the buffer layer; forming a channel layer over the ferroelectric layer; forming a gate oxide layer over a portion of the channel layer; and forming a gate over the gate oxide layer.

Find Patent Forward Citations

Richter, Ralf. (2018). Ferro-fet device with buried buffer/ferroelectric layer stack (U.S. Patent No. 10163933). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10163933

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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