The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Aug. 16, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/28291 (2013.01); H01L 29/42364 (2013.01); H01L 29/512 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/6684 (2013.01); H01L 29/66553 (2013.01); H01L 29/7851 (2013.01); H01L 29/78391 (2014.09); H01L 21/823431 (2013.01); H01L 21/823462 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate and a fin positioned above the semiconductor substrate, wherein the fin includes a semiconductor material. Additionally, a ferroelectric high-k spacer covers sidewall surfaces of the fin and a non-ferroelectric high-k material layer covers the ferroelectric high-k spacer and the fin, wherein a portion of the non-ferroelectric high-k material layer is positioned on and in direct contact with the semiconductor material at the upper surface of the fin.