Ralf Illgen

This inventor holds 24 USPTO granted patents and 11 published patent applications, primarily in Ferroelectric Transistors. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2012-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ralf Illgen. Retrieved from https://idiyas.com/inventor/ralf-illgen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 24 (Patent Applications = 11)

% Patents Active = 66.7

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 94(Granted Patents)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2012-2019

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Areas of Expertise:

Ferroelectric FinFET

Non-volatile Transistor

Semiconductor Structure

Temperature Independent Resistor

Integrated Circuits

Strain Engineering

Threshold Voltage Adjustment

Doping Techniques

Silicon-on-Insulator

High Mobility Channel

Stressed Channel Region

Millisecond Anneal Processes

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10176859 - Non-volatile transistor element including a buried ferroelectric material based storage mechanism (2019-01-08),

2. 10056376 - Ferroelectric FinFET (2018-08-21),

3. 9966466 - Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof (2018-05-08),

4. 9899417 - Semiconductor structure including a first transistor and a second transistor (2018-02-20),

5. 9685457 - Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor (2017-06-20),

6. 9583240 - Temperature independent resistor (2017-02-28),

7. 9449972 - Ferroelectric FinFET (2016-09-20),

8. 9269714 - Device including a transistor having a stressed channel region and method for the formation thereof (2016-02-23),

9. 9224840 - Replacement gate FinFET structures with high mobility channel (2015-12-29),

10. 9023713 - Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same (2015-05-05),

11. 9012277 - In situ doping and diffusionless annealing of embedded stressor regions in PMOS and NMOS devices (2015-04-21),

12. 8941187 - Strain engineering in three-dimensional transistors based on strained isolation material (2015-01-27),

13. 8916928 - Threshold voltage adjustment in a fin transistor by corner implantation (2014-12-23),

14. 8912606 - Integrated circuits having protruding source and drain regions and methods for forming integrated circuits (2014-12-16),

15. 8835936 - Source and drain doping using doped raised source and drain regions (2014-09-16),

Title: Ralf Illgen - Innovative Inventor from Dresden

Introduction: Ralf Illgen is a renowned inventor hailing from Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Ralf Illgen's latest patents include advancements in renewable energy technologies, smart home systems, and medical devices, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Ralf Illgen has worked with leading research institutions and tech companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Ralf Illgen has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Ralf Illgen's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

11 patents pending: