The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jan. 13, 2012
Tim Baldauf, Dresden, DE;
Andy Wei, Queensbury, NY (US);
Tom Herrmann, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Ralf Illgen, Dresden, DE;
Tim Baldauf, Dresden, DE;
Andy Wei, Queensbury, NY (US);
Tom Herrmann, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Ralf Illgen, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In a three-dimensional transistor configuration, a strain-inducing isolation material is provided, at least in the drain and source areas, thereby inducing a strain, in particular at and in the vicinity of the PN junctions of the three-dimensional transistor. In this case, superior transistor performance may be achieved, while in some illustrative embodiments even the same type of internally stressed isolation material may result in superior transistor performance of P-channel transistors and N-channel transistors.