logo

For the Inventor, By the Inventor

Dresden, Germany

Tom Herrmann

This inventor holds 21 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc., Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tom Herrmann. Retrieved from https://idiyas.com/inventor/tom-herrmann

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 81.0

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 47(Granted Patents)


Location History:

  • Dresden, DE (2013 - 2023)
  • Saxony, DE (2022 - 2024)

Company Filing History:

goldMedal13 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal6 out of 1,092 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal2 out of 15 
 
Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.
 patents

Years Active: 2013-2026

Loading Chart...
Areas of Expertise:
Transistor
FDSOI
Non-Volatile Memory
LDMOS
Charge-Trapping
Floating-Gate
Capacitance Variability
Strain Engineering
Integrated Circuits
High Voltage
Threshold Voltage
Silicon-On-Insulator
21 patents (USPTO):Explore Patents
1. 12696538 - Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain (2026-07-28),
2. 12532501 - Structure with back-gate having oppositely doped semiconductor regions (2026-01-20),
3. 11929433 - Asymmetric FET for FDSOI devices (2024-03-12),
4. 11837605 - Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain (2023-12-05),
5. 11610999 - Floating-gate devices in high voltage applications (2023-03-21),
6. 11315949 - Charge-trapping sidewall spacer-type non-volatile memory device and method (2022-04-26),
7. 11245032 - Asymmetric FET for FDSOI devices (2022-02-08),
8. 10930777 - Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage (2021-02-23),
9. 10644152 - Buried-channel low noise transistors and methods of making such devices (2020-05-05),
10. 10580863 - Transistor element with reduced lateral electrical field (2020-03-03),
11. 10497803 - Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications (2019-12-03),
12. 10283642 - Thin body field effect transistor including a counter-doped channel area and a method of forming the same (2019-05-07),
13. 10283584 - Capacitive structure in a semiconductor device having reduced capacitance variability (2019-05-07),
14. 10121846 - Resistor structure with high resistance based on very thin semiconductor layer (2018-11-06),
15. 9711513 - Semiconductor structure including a nonvolatile memory cell and method for the formation thereof (2017-07-18),

Title: The Inventor Tom Herrmann: Revolutionizing Technology from Dresden

Introduction: Tom Herrmann, a visionary inventor hailing from Dresden, Germany, has been at the forefront of technological advancements in various industries.

Latest Patents: Tom Herrmann's latest patents include groundbreaking innovations in renewable energy systems, smart home technology, and advanced medical devices.

Career Highlights: With a career spanning over two decades, Tom Herrmann has consistently pushed the boundaries of innovation. His work has led to significant improvements in efficiency, sustainability, and user experience across multiple sectors.

Collaborations: Throughout his career, Tom Herrmann has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines has resulted in truly transformative technologies.

Conclusion: Tom Herrmann's passion for innovation and his relentless drive to create a better future have solidified his position as a pioneering inventor in the global tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…