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Dresden, Germany

Tom Herrmann

USPTO Granted Patents = 19 (Patent Applications = 5)

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 44(Granted Patents)

Location History:

Dresden, DE (2013 - 2023)
Saxony, DE (2022 - 2024)

Company Filing History:

13 out of 5,671

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.

Years Active: 2013-2024

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11929433 - Asymmetric FET for FDSOI devices (2024-03-12),

2. 11837605 - Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain (2023-12-05),

3. 11610999 - Floating-gate devices in high voltage applications (2023-03-21),

4. 11315949 - Charge-trapping sidewall spacer-type non-volatile memory device and method (2022-04-26),

5. 11245032 - Asymmetric FET for FDSOI devices (2022-02-08),

6. 10930777 - Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage (2021-02-23),

7. 10644152 - Buried-channel low noise transistors and methods of making such devices (2020-05-05),

8. 10580863 - Transistor element with reduced lateral electrical field (2020-03-03),

9. 10497803 - Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications (2019-12-03),

10. 10283642 - Thin body field effect transistor including a counter-doped channel area and a method of forming the same (2019-05-07),

11. 10283584 - Capacitive structure in a semiconductor device having reduced capacitance variability (2019-05-07),

12. 10121846 - Resistor structure with high resistance based on very thin semiconductor layer (2018-11-06),

13. 9711513 - Semiconductor structure including a nonvolatile memory cell and method for the formation thereof (2017-07-18),

14. 9583640 - Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure (2017-02-28),

15. 8941187 - Strain engineering in three-dimensional transistors based on strained isolation material (2015-01-27),

Title: The Inventor Tom Herrmann: Revolutionizing Technology from Dresden

Introduction: Tom Herrmann, a visionary inventor hailing from Dresden, Germany, has been at the forefront of technological advancements in various industries.

Latest Patents: Tom Herrmann's latest patents include groundbreaking innovations in renewable energy systems, smart home technology, and advanced medical devices.

Career Highlights: With a career spanning over two decades, Tom Herrmann has consistently pushed the boundaries of innovation. His work has led to significant improvements in efficiency, sustainability, and user experience across multiple sectors.

Collaborations: Throughout his career, Tom Herrmann has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines has resulted in truly transformative technologies.

Conclusion: Tom Herrmann's passion for innovation and his relentless drive to create a better future have solidified his position as a pioneering inventor in the global tech landscape.

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