The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Aug. 08, 2017
Globalfoundries Inc., Grand Cayman, KY;
Ignasi Cortes Mayol, Dresden, DE;
Christian Schippel, Dresden, DE;
Alban Zaka, Dresden, DE;
Tom Herrmann, Dresden, DE;
El Mehdi Bazizi, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to fully depleted silicon on insulator (SOI) semiconductor structures and methods of manufacture. The structure includes: a gate structure formed over a semiconductor material; a source region adjacent to the gate structure; a drain region remote from the gate structure; and a drift region separating the gate structure from the drain region. The drift region includes an epitaxial material grown on the semiconductor material which increases the thickness of the semiconductor material in the drift region.