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Dresden, Germany

El Mehdi Bazizi

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Applied Materials, Inc., Globalfoundries U.S. Inc.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: El Mehdi Bazizi. Retrieved from https://idiyas.com/inventor/el-mehdi-bazizi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 90.0

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 21(Granted Patents)


Location History:

  • Dresden, DE (2014 - 2020)
  • Saratoga Springs, NY (US) (2019 - 2021)
  • Saratoga Spring, NY (US) (2022)
  • San Jose, CA (US) (2020 - 2023)

Company Filing History:

goldMedal14 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal3 out of 14,482 
 
Applied Materials, Inc.
 patents
bronzeMedal2 out of 1,092 
 
Globalfoundries U.S. Inc.
 patents
4. 1 out of 27 
 
Micro Materials Inc.
 patents

Years Active: 2014-2023

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Areas of Expertise:
Graded Doping
FDSOI Technology
Semiconductor Devices
Field-Effect Transistors
High Frequency Applications
Low Noise Transistors
Integrated Circuits
Capacitance Variability
Silicon-Germanium Channel
Thin Body Transistors
Retrograde Well
20 patents (USPTO):Explore Patents
1. 11705490 - Graded doping in power devices (2023-07-18),
2. 11699755 - Stress incorporation in semiconductor devices (2023-07-11),
3. 11437274 - Fully self-aligned via (2022-09-06),
4. 11245032 - Asymmetric FET for FDSOI devices (2022-02-08),
5. 11145726 - Doped through-contact structures (2021-10-12),
6. 10930777 - Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage (2021-02-23),
7. 10733354 - System and method employing three-dimensional (3D) emulation of in-kerf optical macros (2020-08-04),
8. 10680065 - Field-effect transistors with a grown silicon-germanium channel (2020-06-09),
9. 10644152 - Buried-channel low noise transistors and methods of making such devices (2020-05-05),
10. 10497803 - Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications (2019-12-03),
11. 10283642 - Thin body field effect transistor including a counter-doped channel area and a method of forming the same (2019-05-07),
12. 10283584 - Capacitive structure in a semiconductor device having reduced capacitance variability (2019-05-07),
13. 10121846 - Resistor structure with high resistance based on very thin semiconductor layer (2018-11-06),
14. 9905707 - MOS capacitive structure of reduced capacitance variability (2018-02-27),
15. 9881841 - Methods for fabricating integrated circuits with improved implantation processes (2018-01-30),

Title: Innovator Spotlight: El Mehdi Bazizi - Pioneering Patents in Dresden

Introduction:

El Mehdi Bazizi is a visionary inventor based in Dresden, Germany, with an impressive portfolio of 20 patents that have revolutionized the semiconductor industry. His groundbreaking work in graded doping in power devices and stress incorporation in semiconductor devices has set new standards in the field of technology.

Latest Patents:

1. Graded doping in power devices: El Mehdi Bazizi's patented method involves forming a doped silicon layer on a semiconductor substrate, with a level of doping that increases at an increasing distance from the substrate. This innovative approach allows for the creation of power devices with enhanced performance and efficiency.

2. Stress incorporation in semiconductor devices: Bazizi's patented technology focuses on incorporating stress in the channel region of semiconductor transistors. By depositing stressed material on an adjacent layer and heating it, he has developed semiconductor structures with superior stress levels, resulting in improved device functionality.

Career Highlights:

El Mehdi Bazizi has made significant contributions to leading technology companies such as GlobalFoundries Inc. and Applied Materials, Inc. His expertise in semiconductor research and development has been instrumental in driving innovation and shaping the future of the industry.

Collaborations:

Throughout his career, Bazizi has collaborated with talented individuals such as Alban Zaka and Tom Herrmann. Together, they have worked on projects that have pushed the boundaries of semiconductor technology and paved the way for groundbreaking inventions.

Conclusion:

El Mehdi Bazizi's exceptional talent and dedication to innovation have established him as a key figure in the world of semiconductor technology. His patents continue to influence the industry, setting a high standard for future advancements. Dresden can proudly claim El Mehdi Bazizi as one of its most influential inventors, whose work will undoubtedly inspire generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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