The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Oct. 28, 2016
Globalfoundries Inc., Grand Cayman, KY;
Andrei Sidelnicov, Dresden, DE;
Alban Zaka, Dresden, DE;
El Mehdi Bazizi, Dresden, DE;
Venkata Naga Ranjith Kumar Nelluri, Dresden, DE;
Juergen Faul, Radebeul, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Capacitive structures in the device level of sophisticated MOS devices may be formed so as to exhibit a significantly reduced capacitance/voltage variability. To this end, a highly doped semiconductor region may be formed in the 'channel' of the capacitive structure. For example, for a specified concentration of the dopant species and a specified range of the vertical dimension of the highly doped semiconductor region, a reduced variability of approximately 3% or less may be obtained for a voltage range of, for example, ±5 V.