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For the Inventor, By the Inventor

Dresden, Germany

Alban Zaka

USPTO Granted Patents = 28 

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 29(Granted Patents)


Company Filing History:

goldMedal20 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal4 out of 927 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal2 out of 12 
 
Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.
 patents
4. 2 out of 2 
 
Globalfoundries Dresden Module One LLC &co. Kg
 patents

Years Active: 2014-2024

where 'Filed Patents' based on already Granted Patents

28 patents (USPTO):
1. 11984503 - High-voltage devices integrated on semiconductor-on-insulator substrate (2024-05-14),
2. 11929433 - Asymmetric FET for FDSOI devices (2024-03-12),
3. 11837605 - Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain (2023-12-05),
4. 11610999 - Floating-gate devices in high voltage applications (2023-03-21),
5. 11552192 - High-voltage devices integrated on semiconductor-on-insulator substrate (2023-01-10),
6. 11315949 - Charge-trapping sidewall spacer-type non-volatile memory device and method (2022-04-26),
7. 11245032 - Asymmetric FET for FDSOI devices (2022-02-08),
8. 10930777 - Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage (2021-02-23),
9. 10644152 - Buried-channel low noise transistors and methods of making such devices (2020-05-05),
10. 10580863 - Transistor element with reduced lateral electrical field (2020-03-03),
11. 10497803 - Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications (2019-12-03),
12. 10283642 - Thin body field effect transistor including a counter-doped channel area and a method of forming the same (2019-05-07),
13. 10283584 - Capacitive structure in a semiconductor device having reduced capacitance variability (2019-05-07),
14. 10170614 - Method of forming a semiconductor device (2019-01-01),
15. 10121846 - Resistor structure with high resistance based on very thin semiconductor layer (2018-11-06),

Title: Inventor Alban Zaka

Introduction: Alban Zaka is a renowned inventor based in Dresden, Germany, known for his groundbreaking innovations in the field of renewable energy and sustainable technologies.

Latest Patents: Alban Zaka holds several patents related to solar energy systems, energy storage solutions, and eco-friendly materials, showcasing his commitment to environmental conservation through technological advancements.

Career Highlights: With over two decades of experience in the renewable energy sector, Alban Zaka has played a pivotal role in developing cutting-edge solutions that have revolutionized the way we harness and utilize clean energy sources.

Collaborations: Throughout his career, Alban Zaka has collaborated with leading research institutions, universities, and green energy companies to further his research and bring his inventions to the market, solidifying his reputation as a visionary in the field.

Conclusion: Alban Zaka's dedication to creating sustainable innovations that address the pressing challenges of our time has established him as a trailblazer in the renewable energy industry, inspiring future generations of inventors to prioritize environmental sustainability in their technological pursuits.

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