The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Oct. 10, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Damien Angot, Dresden, DE;
Alban Zaka, Dresden, DE;
Tom Herrmann, Dresden, DE;
Venkata Naga Ranjith Kuma Nelluri, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Lars Mueller-Meskamp, Dresden, DE;
Martin Gerhardt, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/336 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01); H01L 29/10 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1041 (2013.01); H01L 21/2254 (2013.01); H01L 21/84 (2013.01); H01L 29/0649 (2013.01); H01L 29/41783 (2013.01); H01L 29/66575 (2013.01); H01L 29/66628 (2013.01); H01L 29/78 (2013.01); H01L 29/78621 (2013.01);
Abstract
In sophisticated semiconductor devices, the lateral electric field in fully depleted transistor elements operated at elevated supply voltages may be significantly reduced by establishing a laterally graded dopant profile at edge regions of the respective channel regions. In some illustrative embodiments to this end, one or more dopant species may be incorporated prior to completing the gate electrode structure.