Damien Angot

Title: The Innovations of Damien Angot - A Pioneer in Semiconductor Technology

Introduction: Damien Angot is a notable inventor based in Dresden, Germany, recognized for his significant contributions to the field of semiconductor technology. With a keen focus on enhancing the efficiency of transistor elements, Angot has developed innovative solutions that address critical challenges in electronic devices.

Latest Patents: Damien Angot holds a patent for a "Transistor element with reduced lateral electrical field." This invention targets the lateral electric field in fully depleted transistor elements, especially when operated at elevated supply voltages. By establishing a laterally graded dopant profile in the edge regions of the channel, the patent presents a method to significantly reduce the lateral electric field, improving overall device performance. This invention showcases Angot's expertise in the semiconductor domain and his commitment to advancing technology.

Career Highlights: Currently affiliated with GlobalFoundries Inc., Angot has made his mark in the semiconductor industry through both innovation and research. His deep understanding of semiconductor physics and engineering has led to groundbreaking advancements that enhance the performance and reliability of modern electronic devices.

Collaborations: Throughout his career, Angot has collaborated with other talented professionals, including his coworkers Alban Zaka and Tom Herrmann. Together, they work towards driving innovation and pushing the boundaries of semiconductor technology, contributing to the robust research environment at GlobalFoundries.

Conclusion: Damien Angot’s inventive work exemplifies the spirit of innovation in the semiconductor field. With his patented invention and collaborative efforts, he continues to influence the future of electronic devices, ensuring that advancements in technology align with the growing demands of the industry.