The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 27, 2016
Globalfoundries Inc., Grand Cayman, KY;
Alban Zaka, Dresden, DE;
Ignasi Cortes Mayol, Dresden, DE;
Tom Herrmann, Dresden, DE;
Andrei Sidelnicov, Dresden, DE;
El Mehdi Bazizi, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A capacitor, such as an N-well capacitor, in a semiconductor device includes a floating semiconductor region, which allows a negative biasing of the channel region of the capacitor while suppressing leakage into the depth of the substrate. In this manner, N-well-based capacitors may be provided in the device level and may have a substantially flat capacitance/voltage characteristic over a moderately wide range of voltages. Consequently, alternating polarity capacitors formed in the metallization system may be replaced by semiconductor-based N-well capacitors.