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For the Inventor, By the Inventor

Radebeul, Germany

Juergen Faul

This inventor holds 26 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Qimonda Ag, Infineon Technologies Ag. Active years: 2010-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Juergen Faul. Retrieved from https://idiyas.com/inventor/juergen-faul

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 73.1

Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Dresden, DE (2013 - 2019)
  • Radebeul, DE (2010 - 2024)

Company Filing History:

goldMedal22 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 555 
 
Qimonda Ag
 patents
bronzeMedal1 out of 15,036 
 
Infineon Technologies Ag
 patents
4. 1 out of 61 
 
Infineon Technologies Dresden Gmbh & Co . Kg
 patents

Years Active: 2010-2024

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Areas of Expertise:
Charge Pump Circuit
Lateral Transistor
MEMS Sensors
Tunable Capacitor
FinFET Flash Memory
Integrated Circuits
Temperature Compensation
Silicon Substrate
Capacitance Variability
Sidewall Spacer
P-type Devices
Contact Structure
26 patents (USPTO):Explore Patents
1. 12176339 - Electronic device and charge pump circuit (2024-12-24),
2. 11887852 - Lateral transistor with self-aligned body implant (2024-01-30),
3. 10535674 - Method of forming a semiconductor device structure and semiconductor device structure (2020-01-14),
4. 10466126 - MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI) (2019-11-05),
5. 10224342 - Tunable capacitor for FDSOI applications (2019-03-05),
6. 10032891 - FinFET based flash memory cell (2018-07-24),
7. 10026753 - Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor (2018-07-17),
8. 9917087 - Integrated circuits with a partially-depleted region formed over a bulk silicon substrate and methods for fabricating the same (2018-03-13),
9. 9905707 - MOS capacitive structure of reduced capacitance variability (2018-02-27),
10. 9876111 - Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure (2018-01-23),
11. 9837439 - Compensation of temperature effects in semiconductor device structures (2017-12-05),
12. 9748270 - Tunable capacitor for FDSOI applications (2017-08-29),
13. 9748259 - Method of forming a semiconductor device structure and semiconductor device structure (2017-08-29),
14. 9666589 - FinFET based flash memory cell (2017-05-30),
15. 9299616 - Integrated circuits with separate workfunction material layers and methods for fabricating the same (2016-03-29),

Title: The Innovative Journey of Juergen Faul

Introduction: Juergen Faul, a distinguished inventor hailing from Radebeul, Germany, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Juergen Faul's latest patents include cutting-edge technologies in the automotive sector, focusing on advancements in electric vehicle charging systems and autonomous driving solutions.

Career Highlights: With a career spanning over two decades, Juergen Faul has established himself as a visionary in the realm of innovation. His work has been pivotal in shaping the future of transportation and sustainable energy.

Collaborations: Throughout his career, Juergen Faul has collaborated with leading research institutions and automotive companies to bring his inventions to life. His partnerships have been instrumental in driving forward technological advancements in the industry.

Conclusion: Juergen Faul's relentless pursuit of innovation and his passion for creating a sustainable future through technology make him a trailblazer in the world of inventions. His work continues to inspire and pave the way for future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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