The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Oct. 30, 2014
Globalfoundries, Inc., Grand Cayman, KY;
Juergen Faul, Radebeul, DE;
Frank Jakubowski, Dresden, DE;
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Abstract
Integrated circuits employing replacement metal gate technologies with separate workfunction material layers and raised source/drain structures and methods for fabricating the same are disclosed herein. In one exemplary embodiment, a method of fabricating an integrated circuit includes forming a first workfunction material layer over an ILD layer, along the sidewall spacer structures, and over the high-k material layer. The method further includes forming a masking layer over the first workfunction material layer, performing a tilted ion implant wherein ions are implanted at the masking layer over the ILD layer and along the sidewall spacer structures, selectively etching the masking layer and the first workfunction material from over the ILD layer and from along the sidewall spacer structures, and forming a second workfunction material layer over the ILD layer, along the sidewall spacer structures, and over the first workfunction material layer.