The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 20, 2015
Globalfoundries Inc., Grand Cayman, KY;
Alban Zaka, Dresden, DE;
Sven Beyer, Dresden, DE;
Tom Herrmann, Dresden, DE;
El Mehdi Bazizi, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A semiconductor structure includes a nonvolatile memory cell including a source region, a channel region and a drain region that are provided in a semiconductor material. The channel region includes a first portion adjacent the source region and a second portion between the first portion of the channel region and the drain region. An electrically insulating floating gate is provided over the first portion of the channel region. The nonvolatile memory cell further includes a select gate and a control gate. The first portion of the select gate is provided over the second portion of the channel region. The second portion of the select gate is provided over a portion of the floating gate that is adjacent to the first portion of the select gate. The control gate is provided over the floating gate and adjacent to the second portion of the select gate.