The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Nov. 18, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H10D 30/60 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/637 (2025.01); H10D 30/611 (2025.01); H10D 86/201 (2025.01);
Abstract
Embodiments of the disclosure provide a structure with a back-gate having oppositely doped semiconductor regions. The structure may include a transistor over a substrate. The transistor includes a gate structure having a gate length. A back-gate region is within the substrate below the gate structure of the transistor. The back-gate region includes a pair of doped semiconductor regions with a P-N junction therebetween. Each of the pair of semiconductor materials has a length extending substantially in parallel with respect to the gate length.