The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jul. 22, 2015
Globalfoundries Inc., Grand Cayman, KY;
Stefan Flachowsky, Dresden, DE;
Ralf Illgen, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes providing a semiconductor-on-insulator structure including a semiconductor substrate, a layer of electrically insulating material over the semiconductor substrate and a layer of semiconductor material over the layer of electrically insulating material. A first transistor is formed. The formation of the first transistor includes forming a dummy gate structure over the layer of semiconductor material, forming a source region of the first transistor and a drain region of the first transistor in portions of the semiconductor substrate adjacent the dummy gate structure, forming an electrically insulating structure annularly enclosing the dummy gate structure and performing a replacement gate process. The replacement gate process includes removing the dummy gate structure and a portion of the layer of semiconductor material below the dummy gate structure, wherein a recess is formed in the electrically insulating structure. The recess is filled with an electrically conductive material.