The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jul. 10, 2012
Applicants:
Stefan Flachowsky, Dresden, DE;
Ralf Illgen, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/20 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/1054 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract
A method is disclosed for fabricating an integrated circuit in a replacement-gate process flow utilizing a dummy-gate structure overlying a plurality of fin structures. The method includes removing the dummy-gate structure to form a first void space, depositing a shaper material to fill the first void space, removing a portion of the plurality of fin structures to form a second void space, epitaxially growing a high carrier mobility material to fill the second void space, removing the shaper material to form a third void space, and depositing a replacement metal gate material to fill the third void space.