The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Sep. 27, 2013
Globalfoundries Inc., Grand Cayman, KY (US);
Tim Baldauf, Dresden, DE;
Andy Wei, Queensbury, NY (US);
Tom Herrmann, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Ralf Illgen, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
When forming sophisticated multiple gate transistors and planar transistors in a common manufacturing sequence, the threshold voltage characteristics of the multiple gate transistors may be intentionally 'degraded' by selectively incorporating a dopant species into corner areas of the semiconductor fins, thereby obtaining a superior adaptation of the threshold voltage characteristics of multiple gate transistors and planar transistors. In advantageous embodiments, the incorporation of the dopant species may be accomplished by using the hard mask, which is also used for patterning the self-aligned semiconductor fins.