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Dresden, Germany

Namlab Ggmbh

USPTO Granted Patents = 22

Forward Citations = 609

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29 inventors (with patents filed for the assignee):

Stefan Slesazeck (7 out of 7 patents)

Stefan Müller (4 out of 13 patents)

Halid Mulaosmanovic (4 out of 8 patents)

4. Uwe Schröder (3 out of 10 patents)

5. Andre Wachowiak (3 out of 3 patents)

6. Johannes Mueller (2 out of 8 patents)

7. Stefan Flachowsky (2 out of 109 patents)

8. Stefan Mueller (2 out of 2 patents)

9. Alexander Ruf (2 out of 12 patents)

10. Stefan Schmult (2 out of 2 patents)

11. Kyu-Ho Cho (1 out of 17 patents)

12. Milan Pesic (1 out of 1 patent)

13. Youn-soo Kim (1 out of 27 patents)

14. Halid Mulaosmanović (1 out of 1 patent)

15. Han-jin Lim (1 out of 37 patents)

22 patents: Sort by Forward Citations

1. 12094964 - Heterostructure of an electronic circuit having a semiconductor device (2024-09-17),

2. 11699749 - Heterostructure of an electronic circuit having a semiconductor device (2023-07-11),

3. 11515428 - Semiconductor device structure having multiple gate terminals (2022-11-29),

4. 11424253 - Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof (2022-08-23),

5. 11205467 - Ferroelectric memory and logic cell and operation method (2021-12-21),

6. 11145665 - Electrical storage device with negative capacitance (2021-10-12),

7. 10978125 - Transistor with adjustable rectifying transfer characteristic (2021-04-13),

8. 10963776 - Artificial neuron based on ferroelectric circuit element (2021-03-30),

9. 10872905 - Integrated circuit including a ferroelectric memory cell and manufacturing method thereof (2020-12-22),

10. 10600808 - Ferroelectric memory cell for an integrated circuit (2020-03-24),

11. 10424379 - Polarization-based configurable logic gate (2019-09-24),

12. 10347760 - Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof (2019-07-09),

13. 10056393 - Application of antiferroelectric like materials in non-volatile memory devices (2018-08-21),

14. 10043567 - Multilevel ferroelectric memory cell for an integrated circuit (2018-08-07),

15. 9865608 - Method of forming a device including a floating gate electrode and a layer of ferroelectric material (2018-01-09),

NaMLab gGmbH is the leading research institute for nanoelectronics and innovative materials. Headquartered in Dresden, Germany, NaMLab conducts cutting-edge research and provides industry-oriented solutions in the field of electronic materials and devices. Their aim is to develop new processes, materials, and technologies for future generations of electronic devices, enabling advancements in various sectors like energy, automotive, healthcare, and communication. Through collaborations with industry partners and academic institutions, NaMLab contributes to the advancement of nanoelectronics and plays a crucial role in shaping the future of electronic devices.

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Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

22 Patents

#19 in Dresden

#2,085 in Germany

#27,863 in the World

Dresden, Germany

Namlab Ggmbh

Forward Citations = 609

29 inventors:

Stefan Slesazeck (7 out of 7 patents)

Stefan Müller (4 out of 13 patents)

Halid Mulaosmanovic (4 out of 8 patents)

4. Uwe Schröder (3 out of 10 patents)

5. Andre Wachowiak (3 out of 3 patents)

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