The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Sep. 05, 2017
Applicant:
Namlab Ggmbh, Dresden, DE;
Inventor:
Uwe Schröder, Dresden, DE;
Assignee:
NaMLab gGmbH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/11585 (2017.01); G11C 11/22 (2006.01); H01L 29/66 (2006.01); H01L 27/11539 (2017.01); H01L 29/51 (2006.01); H01L 27/10 (2006.01); H01L 49/02 (2006.01); H01L 27/11507 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11585 (2013.01); G11C 11/221 (2013.01); G11C 11/223 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); H01L 27/101 (2013.01); H01L 27/11507 (2013.01); H01L 27/11539 (2013.01); H01L 28/40 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01);
Abstract
An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.