The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Dec. 11, 2017
Applicant:

Namlab Ggmbh, Dresden, DE;

Inventor:

Stefan Müller, Dresden, DE;

Assignee:

NamLab gGmbh, Dresden, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/1159 (2017.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 27/11507 (2017.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); H01L 27/11507 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract

An integrated circuit comprises a ferroelectric memory cell comprising a ferroelectric film comprising a binary oxide ferroelectric with the formula XOwhere X represents a transition metal. The ferroelectric film is a polycrystalline film having a plurality of crystal grains, wherein the crystal grains are oriented along a predetermined crystal axis, or the ferroelectric film is a monocrystalline film, wherein the ferroelectric film comprises additives promoting formation of the crystal structure of the monocrystalline film and/or wherein the memory cell comprises a crystallinity-promoting layer that is directly in contact with the ferroelectric film and promotes formation of the crystal structure of the monocrystalline film.


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