The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

May. 01, 2020
Applicant:

Namlab Ggmbh, Dresden, DE;

Inventor:

Michael Hoffmann, Dresden, DE;

Assignee:

NaMLab gGmbH, Dresden, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11507 (2017.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H01L 27/1159 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 27/1159 (2013.01); H01L 28/60 (2013.01); H01L 29/78391 (2014.09);
Abstract

The energy density of capacitors can be increased by using a material with differential negative capacitance (NC), which was recently observed in FE materials. Described is a more general pathway towards improved electrostatic energy storage densities by engineering the capacitance non-linearity of electrostatic devices. The disadvantages of regular polarizable materials are overcome by using the NC effect, which ideally has no hysteresis losses, leading to a theoretical efficiency of 100%. By storing the energy mostly in an amorphous DE layer, the break-down field strength is much higher compared to pure FE or AFE storage capacitors. In addition, leakage current losses can be reduced by improving the morphology of the insulating materials used.


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