The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Dec. 23, 2020
Applicant:
Namlab Ggmbh, Dresden, DE;
Inventors:
Maik Simon, Dresden, DE;
Jens Trommer, Dresden, DE;
Walter Weber, Vienna, AT;
Stefan Slesazeck, Arnsdorf, DE;
Assignee:
NaMLab gGmbH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78645 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/458 (2013.01); H01L 29/47 (2013.01); H01L 29/66772 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 29/4908 (2013.01);
Abstract
One example provides an integrated circuit comprising a transistor including a semiconductor channel. The semiconductor channel includes three or more sub-channels, one or more nodes, each node being a junction of at least three sub-channels, and channel ends. A Schottky contact at each channel end forms a source or drain contact, and a gate contact disposed at each Schottky contact controls a barrier conductivity of the corresponding Schottky contact.