The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Dec. 01, 2017
Applicant:

Namlab Ggmbh, Dresden, DE;

Inventors:

Stefan Slesazeck, Arnsdorf, DE;

Halid Mulaosmanovic, Dresden, DE;

Evelyn Breyer, Weisswasser, DE;

Assignee:

NaMLab gGmbH, Dresden, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H03K 19/0944 (2006.01); G11C 14/00 (2006.01); H01L 27/11507 (2017.01); H01L 21/28 (2006.01); H01L 27/10 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0072 (2013.01); G11C 11/223 (2013.01); G11C 13/0004 (2013.01); G11C 14/009 (2013.01); H01L 21/28291 (2013.01); H01L 27/101 (2013.01); H01L 27/11507 (2013.01); H03K 19/0944 (2013.01);
Abstract

A polarization-based logic gate includes a transistor having a drain and a polarizable material layer having at least two polarization states, the polarization state representing a first logic value, and a resistive element having a first terminal coupled to the drain and a second terminal. A plurality of input/output terminals connected to the transistor and second terminal of the resistive element so as to apply voltages to selected input/output terminals, including a sensing voltage representing a second logic value, with a resulting drain current of the transistor at least partially flowing through the resistive element and representing a result of a logic operation between the first logic value and the second logic value.


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