The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
May. 06, 2020
Infineon Technologies Ag, Neubiberg, DE;
Manfred Pfaffenlehner, Munich, DE;
Josef-Georg Bauer, Markt Indersdorf, DE;
Frank Dieter Pfirsch, Munich, DE;
Thilo Scheiper, Dortmund, DE;
Konrad Schraml, Feldkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes an active region having a total volume with a central volume forming at least 20% of the total volume, a peripheral volume forming at least 20% of the total volume and surrounding the central volume, and an outermost peripheral volume forming at least 5% of the total volume and surrounding the peripheral volume. The peripheral volume has a constant lateral distance from an edge termination region. A first doped semiconductor region is electrically connected with a first load terminal at a semiconductor body frontside. A second doped semiconductor region is electrically connected with a second load terminal at a semiconductor body backside. The first and/or second doped semiconductor region has: a central portion extending into the central volume and having a central average dopant dose; and a peripheral portion extending into the peripheral volume and having a peripheral average dopant dose.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile