Markt Indersdorf, Germany

Josef-Georg Bauer

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag. Active years: 2009-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Josef-Georg Bauer. Retrieved from https://idiyas.com/inventor/josef-georg-bauer-j4wkhknc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 83.3

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2009-2022

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6 patents (USPTO):Explore Patents

Title: Josef-Georg Bauer: Innovator in Power Semiconductor Technology

Introduction

Josef-Georg Bauer is a notable inventor based in Markt Indersdorf, Germany. He has made significant contributions to the field of power semiconductor devices, holding a total of 6 patents. His work focuses on enhancing the efficiency and reliability of semiconductor technologies.

Latest Patents

One of his latest patents is a power semiconductor device with an anticorrosive edge termination structure. This innovative device features a semiconductor body with a front side coupled to a first load terminal structure and a backside coupled to a second load terminal structure. The design includes an active region for conducting load current and an edge termination region that separates the active region from the lateral chip edge. The protection region in the edge termination accommodates a voltage change of at least 90% of a blocking voltage, enhancing the device's performance.

Another significant patent by Bauer is the power semiconductor device termination structure. This device comprises a semiconductor body with a drift region and an active region containing at least one power cell. The power cell is designed to conduct load current and block a blocking voltage applied between terminals. The termination structure includes a doped semiconductor region and a conductor structure, ensuring effective electrical coupling.

Career Highlights

Josef-Georg Bauer has worked with prominent companies in the semiconductor industry, including Infineon Technologies AG and Infineon Technologies Austria AG. His experience in these organizations has allowed him to develop cutting-edge technologies that advance the field of power electronics.

Collaborations

Throughout his career, Bauer has collaborated with notable professionals such as Gerhard Schmidt and Oliver Humbel. These partnerships have contributed to the successful development of innovative semiconductor solutions.

Conclusion

Josef-Georg Bauer's contributions to power semiconductor technology are significant and impactful. His patents reflect a commitment to innovation and excellence in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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