The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Sep. 30, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Gerhard Schmidt, Wernberg-Wudmath, AT;
Josef-Georg Bauer, Markt Indersdorf, DE;
Carsten Schaeffer, Annenheim, AT;
Oliver Humbel, Maria Elend, AT;
Angelika Koprowski, Klagenfurt, AT;
Sirinpa Monayakul, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 23/31 (2006.01); H01L 21/283 (2006.01); H01L 29/47 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66143 (2013.01); H01L 21/0217 (2013.01); H01L 21/02115 (2013.01); H01L 21/02167 (2013.01); H01L 21/02203 (2013.01); H01L 21/283 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 29/408 (2013.01); H01L 29/47 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 29/0615 (2013.01); H01L 29/0638 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.