The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Oct. 12, 2017
Infineon Technologies Ag, Neubiberg, DE;
Elmar Falck, Hohenbrunn, DE;
Josef-Georg Bauer, Markt Indersdorf, DE;
Jens Brandenburg, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least one power cell being configured to conduct a load current between said terminals and to block a blocking voltage applied between said terminals; an edge that laterally terminates the semiconductor body; and a non-active termination structure arranged in between the edge and the active region. The termination structure comprises: at least one doped semiconductor region implemented in the semiconductor body; a conductor structure, and an ohmic path that electrically couples the conductor structure with an electrical potential of the first load terminal.