The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Mar. 21, 2015
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Gerhard Schmidt, Wernberg-Wudmath, AT;

Josef-Georg Bauer, Markt Indersdorf, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/167 (2006.01); H01L 21/322 (2006.01); H01L 29/36 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 21/322 (2013.01); H01L 21/3221 (2013.01); H01L 29/36 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01); H01L 21/26513 (2013.01); H01L 29/872 (2013.01);
Abstract

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.


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