The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jan. 17, 2001
Josef-georg Bauer, Markt Indersdorf, DE;
Heinrich Brunner, Dorfen, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Josef-Georg Bauer, Markt Indersdorf, DE;
Heinrich Brunner, Dorfen, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In order to reduce not only the static but also the dynamic loss of the power semiconductor foreign atoms are used in the stop-zone. The foreign atoms have at least one energy level within the band gap of the semiconductor and at least 200 meV away from the conduction band and valence band of the semiconductor.