The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

May. 16, 2011
Applicants:

Peter Baars, Dresden, DE;

Sven Beyer, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Inventors:

Peter Baars, Dresden, DE;

Sven Beyer, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66772 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); H01L 29/7843 (2013.01); H01L 29/78618 (2013.01); H01L 29/78687 (2013.01);
Abstract

Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming a gate electrode structure above a semiconducting substrate and forming a plurality of spacers proximate the gate electrode structures, wherein the plurality of spacers comprises a first silicon nitride spacer positioned adjacent a sidewall of the gate electrode structure, a generally L-shaped silicon nitride spacer positioned adjacent the first silicon nitride spacer, and a silicon dioxide spacer positioned adjacent the generally L-shaped silicon nitride spacer.


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