The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Nov. 02, 2010
Applicants:

Thilo Scheiper, Dresden, DE;

Sven Beyer, Dresden, DE;

Uwe Griebenow, Markleeberg, DE;

Jan Hoentschel, Dresden, DE;

Andy Wei, Dresden, DE;

Inventors:

Thilo Scheiper, Dresden, DE;

Sven Beyer, Dresden, DE;

Uwe Griebenow, Markleeberg, DE;

Jan Hoentschel, Dresden, DE;

Andy Wei, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/283 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823425 (2013.01); H01L 21/76897 (2013.01); H01L 21/82345 (2013.01); H01L 21/823462 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/3011 (2013.01);
Abstract

In sophisticated semiconductor devices, the contact structure may be formed on the basis of contact bars formed in a lower portion of an interlayer dielectric material, which may then be contacted by contact elements having reduced lateral dimensions so as to preserve a desired low overall fringing capacitance. The concept of contact bars of reduced height level may be efficiently combined with sophisticated replacement gate approaches.


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