The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Feb. 17, 2012
Applicants:
Chris M. Prindle, Dresden, DE;
Klaus Hempel, Dresden, DE;
Andy C. Wei, Dresden, DE;
Inventors:
Assignee:
GlobalFoundries Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor devices are formed with a gate last, high-K/metal gate process with complete removal of the polysilicon dummy gate and with a gap having a low aspect ratio for the metal fill. Embodiments include forming a dummy gate electrode on a substrate, the dummy gate electrode having a nitride cap, forming spacers adjacent opposite sides of the dummy gate electrode forming a gate trench therebetween, dry etching the nitride cap, tapering the gate trench top corners; performing a selective dry etch on a portion of the dummy gate electrode, and wet etching the remainder of the dummy gate electrode.