The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Mar. 25, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY (US);
Inventors:
Chi Dong Nguyen, Radebeul, DE;
Klaus Hempel, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/225 (2006.01); H01L 21/3205 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 29/1083 (2013.01); H01L 29/6659 (2013.01); H01L 21/26513 (2013.01); H01L 29/6656 (2013.01);
Abstract
A method of forming a semiconductor device is provided including co-implanting a halo species and carbon in a semiconductor layer with a finite tilt angle with respect to a direction perpendicular to the surface of the semiconductor layer. Furthermore, a semiconductor device is provided including an N-channel transistor comprising a halo region made of a halo species with a dopant profile formed in a semiconductor layer and a carbon species implanted in the semiconductor layer with substantially the same dopant profile as the dopant profile of the halo region.