The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Jun. 26, 2012
Applicants:

Sven Beyer, Dresden, DE;

Klaus Hempel, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Stefanie Steiner, Hoyerswerda, DE;

Inventors:

Sven Beyer, Dresden, DE;

Klaus Hempel, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Stefanie Steiner, Hoyerswerda, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.


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