Hoyerswerda, Germany

Stefanie Steiner


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2012-2014

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2 patents (USPTO):Explore Patents

Title: Stefanie Steiner: Innovator in Semiconductor Technology

Introduction

Stefanie Steiner is a prominent inventor based in Hoyerswerda, Germany. She has made significant contributions to the field of semiconductor technology, particularly in the development of advanced gate electrode structures. With a total of 2 patents, her work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Stefanie's latest patents focus on high-k metal gate electrode structures formed by the separate removal of placeholder materials using a masking regime prior to gate patterning. In a replacement gate approach, the placeholder material of gate electrode structures of different types is separately removed. This innovative method allows for the selective formation of electrode metal in the resulting gate openings, providing superior process conditions for adjusting the respective work function of gate electrode structures. One illustrative embodiment of her work involves the separate forming of gate openings in gate electrode structures based on a mask material provided in a gate layer stack.

Career Highlights

Stefanie is currently employed at Globalfoundries Inc., where she continues to push the boundaries of semiconductor technology. Her expertise and innovative approach have made her a valuable asset to the company and the industry as a whole.

Collaborations

Throughout her career, Stefanie has collaborated with notable colleagues, including Sven Beyer and Klaus Hempel. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Stefanie Steiner is a trailblazer in the semiconductor industry, with her patents reflecting her commitment to advancing technology. Her work not only enhances the performance of semiconductor devices but also sets the stage for future innovations in the field.

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