The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jun. 07, 2011
Klaus Hempel, Dresden, DE;
Andy Wei, Dresden, DE;
Robert Binder, Dresden, DE;
Joachim Metzger, Butzbach, DE;
Klaus Hempel, Dresden, DE;
Andy Wei, Dresden, DE;
Robert Binder, Dresden, DE;
Joachim Metzger, Butzbach, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (V) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.