The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Feb. 29, 2012
Sven Schmidbauer, Dresden, DE;
Dina H. Triyoso, Dresden, DE;
Elke Erben, Dresden, DE;
Hao Zhang, Dresden, DE;
Robert Binder, Dresden, DE;
Sven Schmidbauer, Dresden, DE;
Dina H. Triyoso, Dresden, DE;
Elke Erben, Dresden, DE;
Hao Zhang, Dresden, DE;
Robert Binder, Dresden, DE;
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Abstract
Methods are provided for fabricating an integrated circuit that includes metal filled narrow openings. In accordance with one embodiment a method includes forming a dummy gate overlying a semiconductor substrate and subsequently removing the dummy gate to form a narrow opening. A layer of high dielectric constant insulator and a layer of work function-determining material are deposited overlying the semiconductor substrate. The layer of work function-determining material is exposed to a nitrogen ambient in a first chamber. A layer of titanium is deposited into the narrow opening in the first chamber in the presence of the nitrogen ambient to cause the first portion of the layer of titanium to be nitrided. The deposition of titanium continues, and the remaining portion of the layer of titanium is deposited as substantially pure titanium. Aluminum is deposited overlying the layer of titanium to fill the narrow opening and to form a gate electrode.