The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Mar. 31, 2017
Globalfoundries Inc., Grand Cayman, KY;
Bharat V. Krishnan, Mechanicville, NY (US);
Timothy J. McArdle, Ballston Lake, NY (US);
Rinus Tek Po Lee, Ballston Spa, NY (US);
Shishir K. Ray, San Diego, CA (US);
Akshey Sehgal, Malta, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion blocking layer between the doped source and drain regions and an underlying fin region formed within dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile