The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Mar. 31, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Bharat V. Krishnan, Mechanicville, NY (US);
Timothy J. McArdle, Ballston Lake, NY (US);
Rinus Tek Po Lee, Ballston Spa, NY (US);
Shishir K. Ray, San Diego, CA (US);
Akshey Sehgal, Malta, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/41791 (2013.01); H01L 29/7848 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion blocking layer between the doped source and drain regions and an underlying fin region formed within dielectric material.