The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Apr. 15, 2013
International Business Machines Corporation, Armonk, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Eric C. Harley, Lagrangeville, NY (US);
Yue Ke, Fishkill, NY (US);
Annie Levesque, Wappingers Falls, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A self-limiting selective epitaxy process can be employed on a plurality of semiconductor fins such that the sizes of raised active semiconductor regions formed by the selective epitaxy process are limited to dimensions determined by the sizes of the semiconductor fins. Specifically, the self-limiting selective epitaxy process limits growth of the semiconductor material along directions that are perpendicular to crystallographic facets formed during the selective epitaxy process. Once the crystallographic facets become adjoined to one another or to a dielectric surface, growth of the semiconductor material terminates, thereby preventing merger among epitaxially deposited semiconductor materials.